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FFPF60SA60DS
StealthTM Rectifier
FFPF60SA60DS
Features
* * * * * Soft Recovery (tb / ta > 1.2) Fast Recovery (trr < 25ns) Reverse Voltage, 600V Forward Voltage (@ TC = 125C), < 2.0 V Enhanced Avalanche Energy TO-220F-3L
Applications
* * * * * * Switch Mode Power Supplies Hard Swithed PFC Boost Diode UPS Free wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode
12
3
1
2
3
Absolute Maximum Ratings (per leg)
Symbol VRRM VRWM VR IF(AV) IFSM PD WAVL TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current
TC=25C unless otherwise noted Value 600 600 600 @ TC = 95 C 8 80 26 20 - 65 to +150 Units V V V A A W mJ C
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Power Dissipation Avalanche Energy (1A, 40mH) Operating Junction and Storage Temperature
Thermal Characteristics
Symbol RJC RJA Parameter Maximum Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient Value 3.125 62.5 Units C/W C/W
(c)2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
FFPF60SA60DS
Electrical Characteristics (per leg)
Symbol VFM *
TC=25 C unless otherwise noted Min. TC = 25 C TC = 125 C TC = 25 C TC = 125 C Typ. 2.0 1.6 39 2 39 Max. 2.4 2.0 A 100 1000 25 30 ns ns ns A nC Units V
Parameter Maximum Instantaneous Forward Voltage IF = 8A IF = 8A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time (IF =1A, di/dt = 100A/s, VR = 30V) Maximum Reverse Recovery Time (IF =8A, di/dt = 100A/s, VR = 30V) Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge (IF =8A, di/dt = 200A/s, VR = 390V)
IRM *
trr trr trr Irr Qrr
* Pulse Test: Pulse Width=300s, Duty Cycle=2%
Typical Characteristics
10
Forward Current , IF [A]
TC = 25 C TC = 125 C TC = 100 C
1
o o
o
Reverse Current , I R [A]
TC = 150 C
o
100
TC = 150 C TC = 125 C
o
o
10
TC = 100 C
o
1
0.1
TC = 25 C
o
0.1 0.5 1.0 1.5 2.0 2.5
0.001 0 50 100 150 200 250 300 350 400 450 500 550 600
Forward Voltage , VF [V]
Reverse Voltage , VR [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current vs. Reverse Voltage
200
44
Reverse Recovery Time , trr [ns]
Typical Capacitance at 0V = 169.3 pF
42 40 38 36 34 32 30 28 26 100 200 300
IF = 8A Tc = 25 C
o
Capacitance , Cj [pF]
150
100
50
0.1
1
10
100
400
500
600
Reverse Voltage , VR [V]
di/dt [A/s]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time vs. di/dt
(c)2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
FFPF60SA60DS
Typical Characteristics
6
(Continued)
Reverse Recovery Current , Irr [A]
IF = 8A
5
TC = 25 C
o
4
Average Forward Current , IF(AV) [A]
10
D C
3
5
2
1
0 100
200
300
400
500
600
0 60
80
100
120
o
140
160
di/dt [A/s]
Case Temperature , TC [ C]
Figure 5. Typical Reverse Recovery Current vs. di/dt
Figure 6. Forward Curent Derating Curve
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF
L
IF
DUT RG VGE t1 t2 CURRENT SENSE + MOSFET VDD
dIF dt ta
trr tb
0 0.25 IRM IRM
Figure 7. trr Test Circuit
Figure 8. trr Waveforms and Definitions
I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 R + VDD DUT t0 t1 t2 t IL IV IL VAVL
Figure 9. Avalanche Energy Test Circuit
Figure 10. Avalanche Current and Voltage Waveforms
(c)2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
FFPF60SA60DS
Package Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. A, October 2004
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I13

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